Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

Author

Oh, J.H. ; Park, Jae Hyo ; Lim, Y.S. ; Lim, H.S. ; Oh, Y.T. ; Kim, Jong Soo ; Shin, J.M. ; Song, Young Jun ; Ryoo, K.C. ; Lim, D.W. ; Park, S.S. ; Kim, Jong In ; Kim, Ji H. ; Yu, Jinpeng ; Yeung, Frankie ; Jeong, C.W. ; Kong, J.H. ; Kang, D.H. ; Koh, G.H.

Author_Institution

Semicond. R&D Div., Samsung Electron. Co. Ltd., Kyunggi-Do

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

Fully functional 512Mb PRAM with 0.047mum² (5.8F²) cell size was successfully fabricated using 90nm diode technology in which the authors developed novel process schemes such as vertical diode as cell switch, self-aligned bottom electrode contact scheme, and line-type Ge₂Sb₂Te₅. The 512Mb PRAM showed excellent electrical properties of sufficiently large on-current and stable phase transition behavior. The reliability of the 512Mb chip was also evaluated as a write-endurance over 1E5 cycles and a data retention time over 10 years at 85degC

Keywords

antimony compounds; diodes; germanium compounds; integrated circuit reliability; nanotechnology; random-access storage; 512 Mbit; 85 C; 90 nm; Ge₂Sb₂Te₅; full integration; highly manufacturable PRAM; nanotechnology; reliability; self-aligned bottom electrode contact; vertical diode; Contact resistance; Electrodes; Etching; MOSFET circuits; Manufacturing; Phase change random access memory; Semiconductor diodes; Switches; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346905

Filename

4154324