Title :
Critical Quenching Speed Determining Phase of Ge2Sb2Te5 in Phase--Change Memory
Author :
Suh, D. G-S ; Kim, K.H.P. ; Noh, J. G-S ; Shin, W. G-C ; Kang, Y. G-S ; Kim, C. ; Khang, Y. ; Yoo, I.K.
Author_Institution :
Semicond. Device & Material Lab., Samsung Adv. Inst. of Technol., Gyeonggi-Do
Abstract :
During the phase-change process of Ge2Sb2Te 5 in PRAM (phase-change random access memory), phase-change dynamics are strongly dependent on the quenching speed, i.e. the cooling speed of melted phase-change material. Here the paper reports the relation between quenching speed of programming pulse and phases of Ge 2Sb2Te5 in phase-change memory in detail. The existence of critical quenching speed is identified, which determines amorphous and crystalline phases in melting followed by quenching operation
Keywords :
antimony compounds; germanium compounds; phase change materials; random-access storage; Ge2Sb2Te5; PRAM; amorphous phases; cooling speed; critical quenching speed; crystalline phases; melted phase-change material; phase-change dynamics; phase-change memory; phase-change random access memory; Amorphous materials; Crystalline materials; Crystallization; Delay effects; Electrical resistance measurement; Oscilloscopes; Phase change memory; Phase change random access memory; Pulse measurements; Voltage;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346909
