Title :
Nonvolatile SRAM Cell
Author :
Wang, Wei ; Gibby, Aaron ; Wang, Zheng ; Chen, Tze Wee ; Fujita, Shinobu ; Griffin, Peter ; Nishi, Yoshio ; Wong, Simon
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA
Abstract :
A nonvolatile SRAM cell with two back-up nonvolatile memory devices is proposed. This novel cell offers nonvolatile storage, thus allowing selected blocks of SRAM to be powered down during operation. There is no area penalty. A slight performance penalty is anticipated
Keywords :
SRAM chips; nonvolatile SRAM cell; nonvolatile memory devices; nonvolatile storage; Electrodes; Laboratories; Leakage current; Logic devices; MOSFETs; Nonvolatile memory; Radio frequency; Random access memory; Switches; Voltage;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346730
