Title :
Three-Dimensional Full-Band Simulations of Si Nanowire Transistors
Author :
Luisier, Mathieu ; Schenk, Andreas ; Fichtner, Wolfgang
Author_Institution :
Integrated Syst. Lab., ETH Zurich
Abstract :
In this paper the current characteristics of Si triple-gate nanowire transistors are simulated for different channel orientations. The full-band properties of Si are taken into account via the semi-empirical sp3d5s* tight-binding method. The 3D electrostatic potential is solved self-consistently with the device charge density. This allows the treatment of more realistic transistor structures with rough semiconductor-oxide interfaces along the channel
Keywords :
elemental semiconductors; field effect transistors; nanowires; silicon; 3D electrostatic potential; 3D full-band simulations; Si; device charge density; nanowire transistors; semiempirical tight-binding method; Atomic layer deposition; Current density; Electrostatics; FETs; MOSFETs; Poisson equations; Rough surfaces; Slabs; Surface roughness; Wire;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346737
