A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters

Author

Pourfath, M. ; Kosina, H. ; Selberherr, S.

Author_Institution

TU, Wien

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

The performance of carbon nanotube field-effect transistors has been studied based on the non-equilibrium Green´s function formalism. The effects of elastic and inelastic scattering and the impact of parameters, such as electron-phonon coupling strength and phonon energy, on the device performance are analyzed. The effect of scaling of the source-gate spacer, drain-gate spacer, and gate length is studied. The results for devices with different barrier heights at the metal-CNT interface are discussed

Keywords

Green´s function methods; S-parameters; carbon nanotubes; field effect transistors; carbon nanotube field-effect transistors; drain-gate spacer; elastic scattering; electron-phonon coupling strength; gate length; inelastic scattering; interface barrier; metal-CNT interface; nonequilibrium Green function formalism; phonon energy; scattering parameters; source-gate spacer; CNTFETs; Carbon nanotubes; Charge carrier processes; Electrons; Equations; Green´s function methods; Hafnium oxide; MOSFETs; Phonons; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346739

Filename

4154340