GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack

Author

Gao, Fei ; Lee, S.J. ; Li, Rui ; Whang, S.J. ; Balakumar, S. ; Chi, D.Z. ; Kean, Chia Ching ; Vicknesh, S. ; Tung, C.H. ; Kwong, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

By using novel surface passivation techniques (plasma nitridation, AlN-passivation) on GaAs, we demonstrate GaAs p- and n-MOS devices integrated with ALD-HfO₂/TaN gate stack. Results show that robust passivation layers can be achieved at HfO₂/GaAs interface, leading to good C-V characteristics on both n- and p-type GaAs with low leakage current. It is also found that GaAs MOS devices with plasma nitridation and AlN-passivation show higher thermal-stability than Si-passivated devices

Keywords

III-V semiconductors; MIS devices; gallium arsenide; hafnium compounds; nitridation; passivation; tantalum compounds; GaAs; HfO₂-TaN; gate stack; n-MOS devices; p-MOS devices; plasma nitridation; surface passivation techniques; Capacitance-voltage characteristics; Cleaning; Gallium arsenide; Hafnium oxide; Passivation; Plasma applications; Plasma devices; Rough surfaces; Surface morphology; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346743

Filename

4154344