Scaling Behavior of In0.7Ga0.3As HEMTs for Logic

We have experimentally investigated the impact of lateral and vertical scaling of In_0.7Ga_0.3As HEMTs on their logic performance. Reducing the In_0.52Al_0.48As insulator thickness results in much better electrostatic integrity and improved short-channel effects down to a gate length of 60 nm. Our nearly enhancement-mode 60 nm HEMTs feature V_T = -0.02 V, DIBL = 93 mV/V and S = 88 mV/V. For a given value of I_ON/I _OFF = 10³, we obtain CV/I = 0.85 ps at V_cc = 0.5 V. For the same leakage current, these devices exhibit 2.5 times more current drive than state-of-the-art low-power 65 nm CMOS