DocumentCode :
2389609
Title :
1.5 μm Emission from a Silicon MOS-LED Based on a Dislocation Network
Author :
Kittler, M. ; Reiche, M. ; Yu, X. ; Arguirov, T. ; Vyvenko, O.F. ; Seifert, W. ; Mchedlidze, T. ; Jia, G. ; Wilhelm, T.
Author_Institution :
IHP, Frankfurt
fYear :
2006
fDate :
11-13 Dec. 2006
Firstpage :
1
Lastpage :
4
Abstract :
A novel Si MOS-LED is demonstrated, which is fully compatible with Si technology. It is based on a dislocation network fabricated by wafer direct bonding. Light emission at 1.5 μm was observed when the network was near the Si/SiO2 interface close to/inside the accumulation layer induced by the gate voltage
Keywords :
MIS devices; elemental semiconductors; light emitting diodes; silicon; silicon compounds; 1.5 micron; MOS-LED; Si-SiO2; accumulation layer; dislocation network; gate voltage; light emission; wafer direct bonding; CMOS technology; Fasteners; Light emitting diodes; Luminescence; Optical interconnections; Photonic integrated circuits; Silicon; Tunneling; Voltage; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
Type :
conf
DOI :
10.1109/IEDM.2006.346912
Filename :
4154347
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2389609
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