Title :
Process Technology - Silicide and Ultra Shallow Junction Formation
Keywords :
Annealing; Capacitive sensors; Germanium silicon alloys; Laboratories; Nickel; Paper technology; Silicides; Silicon germanium; Transistors;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
DOI :
10.1109/IEDM.2006.346914
