Author :
Kim, Y.S. ; Shimamune, Y. ; Fukuda, M. ; Katakami, A. ; Hatada, A. ; Kawamura, K. ; Ohta, H. ; Sakuma, T. ; Hayami, Y. ; Morioka, H. ; Ogura, J. ; Minami, T. ; Tamura, N. ; Mori, T. ; Kojima, M. ; Sukegawa, K. ; Hashimoto, K. ; Miyajima, M. ; Satoh, S. ;
Abstract :
The impact of defects on the short channel effects (SCE) and the drivability of a pMOSFET with a SiGe source/drain is described, and useful methods to reduce defect formation are suggested. The influence of defects on device performance is found to become more severe as recess depth increases and/or channel length decreases. By optimizing the epitaxial process, including an in-situ precleaning step, the initial defect density is reduced, and by introducing a cap layer on a SiGe layer, the thermal stability of the SiGe layer is improved. The optimized devices enhance mobility 42% by maximizing the strain effect and provide better SCE characteristics by suppressing boron diffusion
Keywords :
Ge-Si alloys; MOSFET; stress relaxation; surface cleaning; SiGe; cap layer; defect formation suppression; drivability characteristic; epitaxial process; in-situ precleaning step; optimized devices; pMOSFET; short channel effects; strain effect; thermal stability; Annealing; Boron; Capacitive sensors; Cleaning; Germanium silicon alloys; Laboratories; MOSFET circuits; Silicon germanium; Thermal degradation; Thermal stability;
