Title :
Experimental Demonstrations of Superior Characteristics of Variable Body-Factor (γ) Fully-Depleted SOI MOSFETs with Extremely Thin BOX of 10 nm
Author :
Ohtou, Tetsu ; Saraya, Takuya ; Shimokawa, Kimiaki ; Doumae, Yasuhiro ; Nagatomo, Yoshiki ; Ida, Jiro ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ.
Abstract :
The superior characteristics of variable body-factor (γ) FD SOI MOSFETs which we have recently proposed are experimentally demonstrated. Devices were fabricated on a SOI wafer with BOX thickness of 10 nm by using the 140 nm technology. Their advantages, small leakage-current in the standby-state and improved delay in the active-state, are clearly validated by the measurements. This scheme is expected to be promising for future low-power, high-performance VLSIs
Keywords :
MOSFET; leakage currents; nanoelectronics; silicon-on-insulator; 10 nm; extremely thin BOX; fully-depleted SOI MOSFET; improved delay; small leakage-current; superior characteristics; variable body-factor; Circuit optimization; Circuit simulation; Degradation; Delay; Geometry; MOSFETs; Parasitic capacitance; Research and development; Substrates; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346922
