A Novel Electrode-Induced Strain Engineering for High Performance SOI FinFET utilizing Si (1hannel for Both N and PMOSFETs

Author

Kang, C.Y. ; Choi, R. ; Song, S.C. ; Choi, K. ; Ju, B.S. ; Hussain, M.M. ; Lee, B.H. ; Bersuker, G. ; Young, C. ; Heh, D. ; Kirsch, P. ; Barnet, J. ; Yang, J.-W. ; Xiong, W. ; Tseng, H-H ; Jammy, R.

Author_Institution

SEMATECH, Austin, TX

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

If Si (110) channel can be used for both nMOS and pMOS FinFET, the implementation of FinFET can be simplified significantly. Electron mobility degradation at Si(110) channel of finFET has been one of the major barriers in this path. We report a creative method to improve electron and hole mobilities using a novel metal electrode induced-strain engineering, which also features the effective workfunction tuning of single metal electrode on high-k dielectric. Compared to planar SOI devices, our optimized SOI FinFETs with metal/high-k stack showed high field mobility for a (110)/lang110rang nMOSFETs, which increased almost two times. By optimizing the workfunction and the strain effect, we achieved an I_on of 930 muA/mum and 680muA/mum for nMOSFETs and pMOSFETs without implementing any other stress engineering process

Keywords

MOSFET; electron mobility; high-k dielectric thin films; hole mobility; metal-insulator boundaries; silicon; silicon-on-insulator; work function; NMOSFET; PMOSFET; Si; Si (110) channel; effective workfunction tuning; electrode-induced strain engineering; electron mobility degradation; high performance SOI FinFET; high-k dielectric; improved electron mobilities; improved hole mobilities; metal electrode induced-strain engineering; strain effect optimizing; Capacitive sensors; Charge carrier processes; Degradation; Electrodes; Electron mobility; FinFETs; High K dielectric materials; High-K gate dielectrics; MOS devices; MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346924

Filename

4154359