High-Performance FinFET with Dopant-Segregated Schottky Source/Drain

Author

Kaneko, A. ; Yagishita, A. ; Yahashi, K. ; Kubota, T. ; Omura, M. ; Matsuo, K. ; Mizushima, I. ; Okano, K. ; Kawasaki, H. ; Izumida, T. ; Kanemura, T. ; Aoki, N. ; Kinoshita, A. ; Koga, J. ; Inaba, S. ; Ishimaru, K. ; Toyoshima, Y. ; Ishiuchi, H. ; Suguro

Author_Institution

Process & Manuf. Eng. Center, Toshiba Corp. Semicond. Co., Yokohama

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

High-performance CMOS-FinFET with dopant-segregated Schottky source/drain (DS-Schottky S/D) technology has been demonstrated. Thanks to the low parasitic resistance in DS-Schottky S/D, high drive current of 960 muA/mum was achieved for nFET with L_g = 15 nm and W_fin =15 nm at V_d= 1.0 V and I_off= 100 nA/mum. Furthermore, the propagation delay time has been successfully improved down to less than 5 ps in the ring oscillator with DS-Schottky S/D CMOS-FinFET with 15 nm gate length

Keywords

MOSFET; semiconductor doping; 1 V; 15 nm; dopant-segregated Schottky source/drain; high-performance FinFET; improved propagation delay time; ring oscillator; CMOS technology; Circuits; FETs; Fabrication; FinFETs; Ion implantation; Large scale integration; Research and development; Ring oscillators; Toy manufacturing industry;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346926

Filename

4154361