DocumentCode :
2390074
Title :
Quantum, Power, and Compound Semiconductor Devices - Breaking the Limits: Si, SIC and GaN Power Switching Devices
fYear :
2006
fDate :
Dec. 2006
Firstpage :
1
Lastpage :
1
Keywords :
Epitaxial growth; Gallium nitride; HEMTs; Ion implantation; MODFETs; MOSFETs; Power semiconductor switches; Power transistors; Semiconductor devices; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
Type :
conf
DOI :
10.1109/IEDM.2006.346928
Filename :
4154363
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2390074
