DocumentCode
2390074
Title
Quantum, Power, and Compound Semiconductor Devices - Breaking the Limits: Si, SIC and GaN Power Switching Devices
fYear
2006
fDate
Dec. 2006
Firstpage
1
Lastpage
1
Keywords
Epitaxial growth; Gallium nitride; HEMTs; Ion implantation; MODFETs; MOSFETs; Power semiconductor switches; Power transistors; Semiconductor devices; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-4244-0439-8
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346928
Filename
4154363
Link To Document