DocumentCode :
2390079
Title :
Dielectric layers for RF-MEMS switches: Design and study of appropriate structures preventing electrostatic charging
Author :
Makasheva, K. ; Despax, B. ; Boudou, L. ; Teyssedre, G.
Author_Institution :
Lab. Plasma et Conversion d´´Energie, Univ. de Toulouse, Narbonne, France
fYear :
2011
fDate :
28-31 Aug. 2011
Firstpage :
73
Lastpage :
74
Abstract :
Both multi-layer structures with discrete levels and with continuous ones represent structural and dielectric properties that are adapted to prevent the electrostatic charging in the dielectric layer of RF-MEMS capacitive switches. The role of interfaces in the multi-layer with discrete levels for charge evacuation will be the next step in our study.
Keywords :
dielectric properties; electrostatics; microswitches; multilayers; RF-MEMS capacitive switches; dielectric layers; electrostatic charging; multilayer structures; Metals; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrets (ISE), 2011 14th International Symposium on
Conference_Location :
Montpellier
ISSN :
2153-3253
Print_ISBN :
978-1-4577-1023-0
Type :
conf
DOI :
10.1109/ISE.2011.6084988
Filename :
6084988
Link To Document :
بازگشت