• DocumentCode
    2390114
  • Title

    1.8 mΩcm2, 10 A Power MOSFET in 4H-SiC

  • Author

    Harada, Shinsuke ; Kato, Makoto ; Suzuki, Kenji ; Okamoto, Mitsuo ; Yatsuo, Tsutomu ; Fukuda, Kenji ; Arai, Kazuo

  • Author_Institution
    Power Electron. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The power MOSFET on 4H-SiC is an attractive high-speed and low-dissipation power switching device. The problem to be solved before realizing the 4H-SiC power MOSFET with low on-resistance is low channel mobility at the SiO2/SiC interface. This work has succeeded in increasing the channel mobility in the buried channel IEMOSFET on carbon-face substrate, and has achieved an extremely low on-resistance of 1.8 mΩcm2 with a blocking voltage of 660 V
  • Keywords
    power MOSFET; semiconductor switches; silicon compounds; 10 A; 4H-SiC; 660 V; SiO2-SiC; buried channel IEMOSFET; channel mobility; extremely low on-resistance; power MOSFET; power switching device; Epitaxial growth; Fabrication; MOSFET circuits; Power MOSFET; Rapid thermal annealing; Rough surfaces; Silicon carbide; Substrates; Surface roughness; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0438-X
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346929
  • Filename
    4154364
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2390114