Title :
1.8 mΩcm2, 10 A Power MOSFET in 4H-SiC
Author :
Harada, Shinsuke ; Kato, Makoto ; Suzuki, Kenji ; Okamoto, Mitsuo ; Yatsuo, Tsutomu ; Fukuda, Kenji ; Arai, Kazuo
Author_Institution :
Power Electron. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki
Abstract :
The power MOSFET on 4H-SiC is an attractive high-speed and low-dissipation power switching device. The problem to be solved before realizing the 4H-SiC power MOSFET with low on-resistance is low channel mobility at the SiO2/SiC interface. This work has succeeded in increasing the channel mobility in the buried channel IEMOSFET on carbon-face substrate, and has achieved an extremely low on-resistance of 1.8 mΩcm2 with a blocking voltage of 660 V
Keywords :
power MOSFET; semiconductor switches; silicon compounds; 10 A; 4H-SiC; 660 V; SiO2-SiC; buried channel IEMOSFET; channel mobility; extremely low on-resistance; power MOSFET; power switching device; Epitaxial growth; Fabrication; MOSFET circuits; Power MOSFET; Rapid thermal annealing; Rough surfaces; Silicon carbide; Substrates; Surface roughness; Voltage;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346929
