DocumentCode
2390148
Title
A Normally-off AlGaN/GaN Transistor with RonA=2.6mΩcm2 and BVds=640V Using Conductivity Modulation
Author
Uemoto, Yasuhiro ; Hikita, Masahiro ; Ueno, Hiroaki ; Matsuo, Hisayoshi ; Ishida, Hidetoshi ; Yanagihara, Manabu ; Ueda, Tetsuzo ; Tanaka, Tsuyoshi ; Ueda, Daisuke
Author_Institution
Semicond. Device Res. Center, Matsushita Electr. - Panasonic, Kyoto
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (gate injection transistor). This new device principle utilizes hole-injection from p-AlGaN to AlGaN/GaN heterojunction, which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to the conductivity modulation. The fabricated GIT exhibits the threshold voltage of 1.0V with high maximum drain current of 200mA/mm. The obtained on-state resistance (Ron·A) and off-state breakdown voltage (BVds) are 2.6mΩ·cm2 and 640V, respectively. These values are the best ones ever reported for GaN-based normally-off transistors
Keywords
III-V semiconductors; aluminium compounds; field effect transistor switches; gallium compounds; power HEMT; power semiconductor switches; wide band gap semiconductors; 1 V; 640 V; AlGaN-GaN; conductivity modulation; gate injection transistor; hole injection; normally-off transistor; Aluminum gallium nitride; Charge carrier processes; Conductivity; FETs; Gallium nitride; HEMTs; Heterojunctions; MODFETs; MOSFETs; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346930
Filename
4154365
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