Title :
High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate
Author :
Suh, C.-S. ; Dora, Y. ; Fichtenbaum, N. ; McCarthy, L. ; Keller, S. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
Abstract :
Enhancement-mode (E-mode) AlGaN/GaN high-electron mobility transistors (HEMTs) with integrated slant field-plates were developed for high breakdown voltage (VBD) and low on-resistance (RON). Combination of the self-aligned slant field-plate technology for high VBD and self-aligned CF4 plasma treatment for E-mode operation yielded high-performance device with a VBD of 1400V, which is one of the highest reported VBD value among GaN-based E-mode HEMTs. Using the active area of the device, the RON was calculated to be below 3mOmegamiddotcm2
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; power HEMT; semiconductor device breakdown; wide band gap semiconductors; 1400 V; AlGaN-GaN; enhancement-mode HEMT; high breakdown voltage HEMT; high-electron mobility transistors; integrated slant field-plate; low on-resistance HEMT; self-aligned CF4 plasma treatment; self-aligned slant field-plate technology; Aluminum gallium nitride; Atomic force microscopy; Gallium nitride; HEMTs; MODFETs; Plasma applications; Plasma devices; Plasma measurements; Scanning electron microscopy; Surface treatment;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346931
