Title :
A 1.7mm-Square 3.2kV Low Leakage Current Si MOSFET
Author :
Komachi, Tomonori ; Takayama, Tadahiko ; Imamura, Makoto
Author_Institution :
Adv. Device Dev. Div., Yokogawa Electr. Corp., Tokyo
Abstract :
We proposed a new termination structure to minimize the chip size of high breakdown voltage vertical DMOSFETs and to manufacture them using a MEMS process. As a result, we were able to realize a fully functional 1.7 mm square silicon DMOSFET with a breakdown voltage of 3200 V, a leakage current of 1.2 nA at 200 V and an on-state resistance of 165Omega
Keywords :
leakage currents; micromachining; power MOSFET; semiconductor device breakdown; silicon; 1.2 nA; 165 ohm; 200 V; 3.2 kV; MEMS process; Si; high breakdown voltage vertical DMOSFET; leakage current; on-state resistance; termination structure; Electrical resistance measurement; FETs; Insulation; Leakage current; MOSFET circuits; Manufacturing processes; Micromechanical devices; Power semiconductor switches; Research and development; Silicon;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346932
