Title :
XtreMOS : The First Integrated Power Transistor Breaking the Silicon Limit
Author :
Moens, P. ; Bauwens, F. ; Baele, J. ; Vershinin, K. ; Backer, E. De ; Narayanan, E. M Sankara ; Tack, M.
Author_Institution :
AMI Semicond. Belgium BVBA, Oudenaarde
Abstract :
Record performance of a novel power transistor integrated in a 0.35 μm power IC technology is reported. Measured specific on-state resistance of 33 mOhm*mm2 for a 94 V breakdown is breaking the silicon-limit and is the lowest reported value to date. The device outperforms its nearest rival by a factor of 2.5. The device consists of the stacking of a vertical MOS on a fully depleted vertical drift layer, leading to a high cell density
Keywords :
CMOS integrated circuits; MOS capacitors; power integrated circuits; power transistors; 0.35 micron; 94 V; XtreMOS; fully depleted vertical drift layer; high cell density; integrated power transistor; power IC technology; specific on-state resistance; vertical MOS stacking; Ambient intelligence; CMOS process; MOS capacitors; MOSFETs; Power integrated circuits; Power transistors; Silicon; Stacking; Switches; Voltage;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346933
