DocumentCode :
2390285
Title :
Modeling and Simulation - Transport Modeling in Silicon Nano-MOSFETs
fYear :
2006
fDate :
11-13 Dec. 2006
Firstpage :
1
Lastpage :
1
Keywords :
Capacitive sensors; Germanium silicon alloys; Impurities; MOSFETs; Monte Carlo methods; Nanoscale devices; Particle scattering; Quantum mechanics; Radio frequency; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Type :
conf
DOI :
10.1109/IEDM.2006.346936
Filename :
4154371
Link To Document :
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