Title :
Modeling and Simulation - Transport Modeling in Silicon Nano-MOSFETs
Keywords :
Capacitive sensors; Germanium silicon alloys; Impurities; MOSFETs; Monte Carlo methods; Nanoscale devices; Particle scattering; Quantum mechanics; Radio frequency; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
DOI :
10.1109/IEDM.2006.346936