• DocumentCode
    2390322
  • Title

    New insights of boron penetration on dual gate oxide with different thickness

  • Author

    Wang, C.S. ; Lin, D.Y. ; Sun, S.C. ; Chau, Z.M. ; Cheng, C.C. ; Lin, C.H.

  • Author_Institution
    Reliability Assurance Dept., Mosel Vitelic Inc, Hsin-Chu, Taiwan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    60
  • Lastpage
    62
  • Abstract
    Two different TDDB behaviors have been for the first time observed in our work with different dual gate oxide thicknesses. (1st) The different transient scheme during TDDB stress for thin and thick oxide thickness, and (2nd) The different neutral trap generation rate during oxide degradation procedure for n and p type capacitors and different neutral trap distribution post oxide stress for thin and thick oxides. A variety of physical and electrical methodologies are presented in this paper to investigate the role of boron on 0.17 μm dual gate and dual oxide technologies
  • Keywords
    MOS capacitors; boron; semiconductor device breakdown; 0.17 micron; MOS capacitor; SiO2:B; TDDB; boron penetration; dual gate oxide; neutral trap distribution; transient current; Boron; Current measurement; Degradation; Electric breakdown; MOS capacitors; MOS devices; MOSFET circuits; Stress; Temperature; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2001. 2001 IEEE International
  • Conference_Location
    Lake Tahoe, CA
  • Print_ISBN
    0-7803-7167-4
  • Type

    conf

  • DOI
    10.1109/.2001.993918
  • Filename
    993918
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2390322