Title :
New insights of boron penetration on dual gate oxide with different thickness
Author :
Wang, C.S. ; Lin, D.Y. ; Sun, S.C. ; Chau, Z.M. ; Cheng, C.C. ; Lin, C.H.
Author_Institution :
Reliability Assurance Dept., Mosel Vitelic Inc, Hsin-Chu, Taiwan
Abstract :
Two different TDDB behaviors have been for the first time observed in our work with different dual gate oxide thicknesses. (1st) The different transient scheme during TDDB stress for thin and thick oxide thickness, and (2nd) The different neutral trap generation rate during oxide degradation procedure for n and p type capacitors and different neutral trap distribution post oxide stress for thin and thick oxides. A variety of physical and electrical methodologies are presented in this paper to investigate the role of boron on 0.17 μm dual gate and dual oxide technologies
Keywords :
MOS capacitors; boron; semiconductor device breakdown; 0.17 micron; MOS capacitor; SiO2:B; TDDB; boron penetration; dual gate oxide; neutral trap distribution; transient current; Boron; Current measurement; Degradation; Electric breakdown; MOS capacitors; MOS devices; MOSFET circuits; Stress; Temperature; Threshold voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2001. 2001 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-7167-4
DOI :
10.1109/.2001.993918
