Title :
Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs
Author :
Krishnamohan, Tejas ; Jungemann, Christoph ; Kim, Donghyun ; Ungersboeck, Enzo ; Selberherr, Siegfried ; Wong, Philip ; Nishi, Yoshio ; Saraswat, Krishna
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA
Abstract :
Using the non-local empirical pseudopotential method (bandstructure), full-band Monte-Carlo simulations (transport), 1D Poisson-Schrodinger (electrostatics) and detailed band-to-band-tunneling (BTBT) (including bandstructure and quantum effects) simulations, the effect of uniaxial- and biaxial-strain, band-structure, mobility, effective masses, density of states, channel orientation and high-field transport on the drive current, off-state leakage and switching delay in nano-scale, Si, SiGe and Ge, p-MOS DGFETs is thoroughly and systematically investigated
Keywords :
Ge-Si alloys; MOSFET; Monte Carlo methods; Poisson equation; Schrodinger equation; band structure; elemental semiconductors; germanium; pseudopotential methods; semiconductor device models; silicon; 1D Poisson Schrodinger; SiGe; band structure; band to band tunneling; bandstructure; biaxial strain; channel orientation; density of states; double gate p-MOSFET; drive current; effective masses; electrostatics; full band Monte Carlo simulations; high field transport; mobility; nanoscale; off state leakage; pseudopotential method; quantum effects; switching delay; uniaxial strain; Capacitive sensors; Compressive stress; Delay; Effective mass; Germanium silicon alloys; MOSFET circuits; Photonic band gap; Silicon germanium; Tensile stress; Uniaxial strain;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346938
