Title :
Isothermal EM test development for Cu /oxide single damascene interconnect
Author :
Leong, Andrew Yap Kin
Author_Institution :
Reliability Engineering, Chartered Semiconductor Manufacturing
Abstract :
Isothermal (ISOT) EM offers a fast method to evaluate metal EM degradation rate and is a promising tool to reduce process development cycle time leading to timely and successful qualification. In this study, we report preliminary results on developing ISOT method for single damascene Cu/oxide interconnect scheme. We observed statistics of failure to obey lognormal distribution with reasonable sigma at various temperatures. We observed a crossover temperature beyond which failure location has changed from "random" along the line to end of line
Keywords :
Circuit testing; Current density; Electrical resistance measurement; Integrated circuit interconnections; Isothermal processes; System testing; Temperature distribution; Temperature measurement; Thermal resistance; Thermal stresses;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2001. 2001 IEEE International
Conference_Location :
Lake Tahoe, CA, USA
Print_ISBN :
0-7803-7167-4
DOI :
10.1109/IRWS.2001.993919
