Title :
Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach
Author :
Querlioz, D. ; Saint-Martin, J. ; Do, V.N. ; Bournel, A. ; Dollfus, P.
Author_Institution :
Inst. d´´Electronique Fondamentale, Paris Sud Univ., Orsay
Abstract :
A new self-consistent quantum simulator based on the Monte Carlo solution of Wigner transport equation is used to analyze the operation of 6 nm-long DG-MOSFETs. By comparison with other simulation approaches, the work emphasizes the important role of scattering and quantum effects on the electrical characteristics of such nano-devices. The results are confronted to ITRS specifications and the various effects of aggressive oxide thickness thinning on device performance are discussed
Keywords :
MOSFET; Monte Carlo methods; Wigner distribution; semiconductor device models; 6 nm; DG MOSFET; Monte Carlo solution; Wigner transport equation; device performance; oxide thickness thinning; quantum effects; quantum simulator; realistic scattering; Analytical models; Computational modeling; Electric variables; Electromagnetic compatibility; Monte Carlo methods; Nanoscale devices; Particle scattering; Performance analysis; Physics; Schrodinger equation;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346939
