Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach

Author

Querlioz, D. ; Saint-Martin, J. ; Do, V.N. ; Bournel, A. ; Dollfus, P.

Author_Institution

Inst. d´´Electronique Fondamentale, Paris Sud Univ., Orsay

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

A new self-consistent quantum simulator based on the Monte Carlo solution of Wigner transport equation is used to analyze the operation of 6 nm-long DG-MOSFETs. By comparison with other simulation approaches, the work emphasizes the important role of scattering and quantum effects on the electrical characteristics of such nano-devices. The results are confronted to ITRS specifications and the various effects of aggressive oxide thickness thinning on device performance are discussed

Keywords

MOSFET; Monte Carlo methods; Wigner distribution; semiconductor device models; 6 nm; DG MOSFET; Monte Carlo solution; Wigner transport equation; device performance; oxide thickness thinning; quantum effects; quantum simulator; realistic scattering; Analytical models; Computational modeling; Electric variables; Electromagnetic compatibility; Monte Carlo methods; Nanoscale devices; Particle scattering; Performance analysis; Physics; Schrodinger equation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0438-X

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346939

Filename

4154374