DocumentCode :
2390360
Title :
WLR monitoring methodology for assessing charging damage on oxides thicker than 4nm using antenna structures
Author :
Smeets, David ; Martin, Andreas ; Fazekas, Josef
Author_Institution :
Reliability Methodology Monitoring (RM MON), Infineon Technol. AG, Munich, Germany
fYear :
2001
fDate :
2001
Firstpage :
67
Lastpage :
73
Abstract :
In this paper a structured scheme of antenna test measurements and data analysis for production monitoring applications will be presented. It is taking into account that usually in a production environment no test chip but a limited number of scribe line modules are available. Scribe line modules allow for placement into most of the products without wasting productive silicon area. The focus is on systematic data evaluation and the possibility to use this method for a discussion and generation of a JEDEC standard on Plasma Induced Damage (PID)
Keywords :
MOSFET; antennas in plasma; plasma materials processing; process monitoring; semiconductor device measurement; semiconductor device reliability; 4 nm; JEDEC standard; MOSFET; antenna test measurement; charging damage; data analysis; gate oxide; plasma induced damage; production monitoring; scribe line module; wafer-level reliability; Antenna measurements; MOSFETs; Monitoring; Plasma applications; Plasma immersion ion implantation; Plasma measurements; Plasma sources; Production; Stress; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2001. 2001 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-7167-4
Type :
conf
DOI :
10.1109/.2001.993920
Filename :
993920
Link To Document :
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