DocumentCode
2390381
Title
Random Impurity Scattering Induced Variability in Conventional Nano-Scaled MOSFETs: Ab initio Impurity Scattering Monte Carlo Simulation Study
Author
Alexander, C.L. ; Roy, G. ; Asenov, A.
Author_Institution
Dept. of E & EE, Glasgow Univ.
fYear
2006
fDate
11-13 Dec. 2006
Firstpage
1
Lastpage
4
Abstract
Results of statistical 3D Monte Carlo (MC) simulation of random dopant induced current variations are presented for a series of well-scaled nano-MOSFETs. Comparison is made with drift diffusion (DD) results showing an increase in the estimated current variation. This is associated with additional transport variation that has been included within the MC
Keywords
MOSFET; Monte Carlo methods; nanoelectronics; semiconductor device models; Monte Carlo simulation; current variation; drift diffusion; induced variability; nano scaled MOSFET; random dopant; random impurity scattering; Analytical models; Computational modeling; Electrostatics; Impurities; MOSFETs; Monte Carlo methods; Nanoscale devices; Rough surfaces; Scattering parameters; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location
San Francisco, CA
Print_ISBN
1-4244-0438-X
Electronic_ISBN
1-4244-0439-8
Type
conf
DOI
10.1109/IEDM.2006.346941
Filename
4154376
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