Title :
Random Impurity Scattering Induced Variability in Conventional Nano-Scaled MOSFETs: Ab initio Impurity Scattering Monte Carlo Simulation Study
Author :
Alexander, C.L. ; Roy, G. ; Asenov, A.
Author_Institution :
Dept. of E & EE, Glasgow Univ.
Abstract :
Results of statistical 3D Monte Carlo (MC) simulation of random dopant induced current variations are presented for a series of well-scaled nano-MOSFETs. Comparison is made with drift diffusion (DD) results showing an increase in the estimated current variation. This is associated with additional transport variation that has been included within the MC
Keywords :
MOSFET; Monte Carlo methods; nanoelectronics; semiconductor device models; Monte Carlo simulation; current variation; drift diffusion; induced variability; nano scaled MOSFET; random dopant; random impurity scattering; Analytical models; Computational modeling; Electrostatics; Impurities; MOSFETs; Monte Carlo methods; Nanoscale devices; Rough surfaces; Scattering parameters; Semiconductor process modeling;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346941
