Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-signal and RF applications

Author

Eminente, Simone ; Barin, Nicola ; Palestri, Pierpaolo ; Fiegna, Claudio ; Sangiorgi, Enrico

Author_Institution

ARCES, Bologna Univ.

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

A state of the art Monte-Carlo simulator is applied to the investigation of the RF performance of bulk MOSFETs designed according to the prescriptions of the 2005 ITRS Roadmap for analog and mixed signal applications, and of a 53 nm ultra-thin-body (UTB) single-gate (SG) SOI MOSFET. We provide an analysis of the signal-delay build-up along the channel and an investigation of the scaling properties of the parameters of the AC equivalent circuit, the transition frequency F_T, and the 3dB bandwidth of the voltage gain in common-source configuration. The effects of ballistic transport and their impact on the AC figures of merit are investigated for short UTB double-gate MOSFETs

Keywords

MOS integrated circuits; Monte Carlo methods; equivalent circuits; integrated circuit design; mixed analogue-digital integrated circuits; nanoelectronics; radiofrequency integrated circuits; silicon-on-insulator; 53 nm; Monte Carlo simulation; RF application; SOI; analog/mixed signal application; deca nanometer MOSFET; equivalent circuit; scaling properties; signal delay; single gate; Ballistic transport; Bandwidth; CMOS technology; Circuit simulation; Delay; Equivalent circuits; MOSFETs; Radio frequency; Signal analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0439-8

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346942

Filename

4154377