Title :
Electromigration current limit of high speed SiGe bipolar transistors influenced by device self-heating
Author :
Brelsford, Kevin ; Rieh, Jae-Sung ; Wang, Ping-Chuan ; Freeman, Greg
Author_Institution :
IBM Microelectron., Hopewell Junction, NY, USA
Abstract :
In this paper, an overview of the metal electromigration current limit of bipolar transistors is presented in which the device self-heating is taken into account, followed by related design considerations. In this evaluation, we use HBTs processed using IBM´s 0.18 mum SiGe BiCMOS technology. This technology was selected to demonstrate the necessity of these studies to high-speed communication circuit designs
Keywords :
Ge-Si alloys; electromigration; heterojunction bipolar transistors; semiconductor materials; 0.18 micron; BiCMOS technology; SiGe; SiGe heterojunction bipolar transistor; electromigration current limit; high-speed communication circuit design; self-heating; Bipolar transistors; Current density; Electromigration; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit interconnections; Microelectronics; Silicon germanium; Temperature sensors; Thermal resistance;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2001. 2001 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-7167-4
DOI :
10.1109/.2001.993922
