Title :
25 nm Planar Bulk SONOS-type Memory with Double Tunnel Junction
Author :
Ohba, Ryuji ; Mitani, Yuichiro ; Sugiyama, Naoharu ; Fujita, Shinobu
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama
Abstract :
25nm gate length bulk-planar SONOS-type memory, which has Si nanocrystalline layer between double tunnel oxides, shows excellent memory characteristics due to Coulomb blockade and quantum confinement in Si nanocrystals. A direct evidence of great advantage in trade-off between charge retention and w/e speed is shown experimentally, and it is shown that further device scaling and improvement are possible by Si nanocrystal size scaling. Double tunnel junction SONOS-type memory is a strong candidate in less than 25nm region
Keywords :
Coulomb blockade; elemental semiconductors; nanostructured materials; semiconductor storage; silicon; 25 nm; Coulomb blockade; SONOS type memory; Si; Si nanocrystalline layer; charge retention; device scaling; double tunnel junction; quantum confinement; CMOS process; Laboratories; Large scale integration; Nanocrystals; Nonvolatile memory; Potential well; Silicon compounds; Size control; Temperature; Voltage;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346945
