Class-E Doherty power amplifier based on harmonic tuning

Author

Liu, Wenzheng ; Jing, Shouzhao

Author_Institution

Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2010

fDate

6-8 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

This letter reports a high-efficiency gallium nitride (GaN) high-electron mobility transistor (HEMT) Doherty power amplifier (DPA) based on the Class-E topology for 3GPP-FDD applications. The harmonic controlling network (HCN) applied in the proposed DPA provides the impedance transformation for the harmonic components so that it achieves significant harmonic suppression. For the proposed DPA , the power added efficiency (PAE) is 62.1% at 37.03 dBm, 5-dB backoff power from saturation output power. For a 1-carrier 3 GPP-FDD signal, the adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) are achieved 32.16 dB and 6.59%, respectively, at 37.03 dBm. The results prove that the proposed DPA can deliver high efficiency with proper linearity for 3 GPP applications.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; GaN; HEMT; class-E Doherty power amplifier; class-E topology; error vector magnitude; harmonic controlling network; harmonic tuning; high-efficiency gallium nitride high-electron mobility transistor; impedance transformation; power added efficiency; saturation output power; Educational institutions; Gallium nitride; Harmonic analysis; Microstrip; Power system harmonics; Switches; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

Intelligent Signal Processing and Communication Systems (ISPACS), 2010 International Symposium on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-7369-4

Type

conf

DOI

10.1109/ISPACS.2010.5704713

Filename

5704713