Title :
Advanced FinFET CMOS Technology: TiN-Gate, Fin-Height Control and Asymmetric Gate Insulator Thickness 4T-FinFETs
Author :
Liu, Yongxun ; Matsukawa, Takashi ; Endo, Kazuhiko ; Masahara, Meishoku ; Ishii, Kenichi ; O´uchi, S. ; Yamauchi, Hiromi ; Tsukada, Junichi ; Ishikawa, Yuki ; Suzuki, Eiichi
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
Abstract :
We have successfully developed the advanced FinFET fabrication processes for materializing FinFET CMOS circuits. Using the developed technologies, we demonstrate the advanced TiN metal gate, fin-height controlled FinFET CMOS inverter with an excellent transfer performance, and the flexible threshold voltage, asymmetric gate insulator thickness four-terminal (4T) FinFET with a greatly improved subthreshold (S) slope, for the first time
Keywords :
CMOS integrated circuits; invertors; titanium compounds; CMOS technology; FinFET; TiN; TiN metal gate; fin-height control; gate insulator; inverter; CMOS process; CMOS technology; Circuits; Fabrication; FinFETs; Insulation; Metal-insulator structures; Thickness control; Tin; Voltage control;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346953
