Highly Compact 3.1 - 10.6 GHz UWB LNA in SiGe HBT Technology

Author

Dederer, J. ; Chartier, S. ; Feger, T. ; Spitzberg, U. ; Trasser, A. ; Schumacher, H.

Author_Institution

Ulm Univ., Ulm

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

327

Lastpage

330

Abstract

We present the design, implementation and measurement of a low noise amplifier (LNA) in a low cost 0.8 mum SiGe heterojunction bipolar technology (HBT). The measured noise figure is between 2.1 dB and 2.6 dB in the FCC-allocated bandwidth for ultra-wideband (UWB) systems. The circuit delivers 19.6 dB peak gain with gain variations of 1.3 dB within the entire band from 3.1 to 10.6 GHz. Broadband noise and power matching has been achieved with a cascode topology using resistive shunt feedback in combination with a diode DC level shifter. The measured input IPS is -14.1 dBm with 10.3 mA total current from a 3.5 V supply. All performance characteristics are comparable to the best reported UWB LNAs but come at a drastically smaller occupied die area of 0.13 mm².

Keywords

bandwidth allocation; heterojunction bipolar transistors; low noise amplifiers; microwave amplifiers; ultra wideband technology; SiGe; SiGe HBT technology; UWB LNA; bandwidth allocation; broadband noise; cascode topology; current 10.3 mA; diode DC level shifter; frequency 3.1 GHz to 10.6 GHz; heterojunction bipolar technology; low noise amplifier; power matching; resistive shunt feedback; size 0.8 mum; ultra-wideband system; voltage 3.5 V; Bandwidth; Circuit noise; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Noise measurement; Silicon germanium; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Technologies, 2007 European Conference on

Conference_Location

Munich

Print_ISBN

978-2-87487-003-3

Type

conf

DOI

10.1109/ECWT.2007.4404013

Filename

4404013