Author :
Rooyackers, R. ; Augendre, E. ; Degroote, B. ; Collaert, N. ; Nackaerts, A. ; Dixit, A. ; Vandeweyer, T. ; Pawlak, B. ; Ercken, M. ; Kunnen, E. ; Dilliway, G. ; Leys, F. ; Loo, R. ; Jurczak, M. ; Biesemans, S.
Abstract :
Multiple gate field effect transistors (MuGFET) with a fin pitch down to 50nm obtained with 193nm optical lithography and proposed fin quadrupling patterning method are demonstrated. The fins patterned with this technique feature improved CD control and line width roughness. High fin density in combination with Si-SEG that allows merging individual fins outside the spacer region lead to reduction in parasitic source/drain-resistance and 3-fold increase in drive current per surface unit
Keywords :
field effect transistors; photolithography; silicon; 193 nm; 50 nm; CD variation; MuGFET; Si-SEG; fin integration; fin pitch; fin quadrupling patterning; layout efficiency; multiple gate field effect transistors; optical lithography; pattern fidelity; Etching; FETs; Germanium silicon alloys; Lithography; Merging; Resists; Rough surfaces; Silicon compounds; Silicon germanium; Stability;
