Title :
A temperature, supply voltage compensated floating-gate MOS dosimeter using VTH extractor
Author :
Wang, Yanjie ; Wang, Yanbin ; Tarr, Garry ; Iniewski, Kris
Author_Institution :
Dept. of Electr. & Comput. Eng., Alberta Univ., Edmonton, Alta., Canada
Abstract :
A temperature and supply voltage compensated floating-gate MOSFET dosimeter is presented. The dosimeter consists of two pairs of floating-gate sensor transistors with identical geometry for compensation purpose, VTH (threshold voltage) extractor circuits and substractors. The dosimeter output presents the threshold voltage changes of the floating-gate MOSFET sensors before and after radiation. The circuit has been modeled and simulated in Hspice using TSMC 0.35μm CMOS technology at 2.4V power supply. Simulated results show a low sensitivity to temperature and VDD variations and a low power consumption of 0.44mW.
Keywords :
CMOS integrated circuits; MOSFET; SPICE; circuit simulation; compensation; dosimeters; 0.35 micron; 0.44 mW; 2.4 V; CMOS technology; Hspice; extractor circuits; floating-gate MOSFET dosimeter; floating-gate MOSFET sensor; floating-gate sensor transistor; substractor circuit; temperature compensation; threshold voltage extractor circuit; voltage compensation; Capacitance; Data engineering; Databases; Equations; Feedback loop; MOSFET circuits; Mirrors; Temperature control; Temperature sensors; Voltage control;
Conference_Titel :
System-on-Chip for Real-Time Applications, 2005. Proceedings. Fifth International Workshop on
Print_ISBN :
0-7695-2403-6
DOI :
10.1109/IWSOC.2005.30
