• DocumentCode
    2390659
  • Title

    A temperature, supply voltage compensated floating-gate MOS dosimeter using VTH extractor

  • Author

    Wang, Yanjie ; Wang, Yanbin ; Tarr, Garry ; Iniewski, Kris

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Alberta Univ., Edmonton, Alta., Canada
  • fYear
    2005
  • fDate
    20-24 July 2005
  • Firstpage
    176
  • Lastpage
    179
  • Abstract
    A temperature and supply voltage compensated floating-gate MOSFET dosimeter is presented. The dosimeter consists of two pairs of floating-gate sensor transistors with identical geometry for compensation purpose, VTH (threshold voltage) extractor circuits and substractors. The dosimeter output presents the threshold voltage changes of the floating-gate MOSFET sensors before and after radiation. The circuit has been modeled and simulated in Hspice using TSMC 0.35μm CMOS technology at 2.4V power supply. Simulated results show a low sensitivity to temperature and VDD variations and a low power consumption of 0.44mW.
  • Keywords
    CMOS integrated circuits; MOSFET; SPICE; circuit simulation; compensation; dosimeters; 0.35 micron; 0.44 mW; 2.4 V; CMOS technology; Hspice; extractor circuits; floating-gate MOSFET dosimeter; floating-gate MOSFET sensor; floating-gate sensor transistor; substractor circuit; temperature compensation; threshold voltage extractor circuit; voltage compensation; Capacitance; Data engineering; Databases; Equations; Feedback loop; MOSFET circuits; Mirrors; Temperature control; Temperature sensors; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    System-on-Chip for Real-Time Applications, 2005. Proceedings. Fifth International Workshop on
  • Print_ISBN
    0-7695-2403-6
  • Type

    conf

  • DOI
    10.1109/IWSOC.2005.30
  • Filename
    1530937
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2390659