Status, challenges, and future opportunities for compound semiconductor electronics

Author

Zolper, J.C.

Author_Institution

DARPA/MTO, Arlington, VA, USA

fYear

2003

fDate

9-12 Nov. 2003

Firstpage

3

Lastpage

6

Abstract

Recent developments and future opportunities for compound semiconductor electronics for analog and mixed signal circuits for the Department of Defense (DoD) are reviewed. The realization of extremely high performance transistors, often uniquely enable by compound semiconductor materials, will be highlighted.

Keywords

HEMT integrated circuits; III-V semiconductors; MESFET integrated circuits; Schottky gate field effect transistors; bipolar MIMIC; bipolar MMIC; bipolar analogue integrated circuits; field effect MIMIC; field effect MMIC; heterojunction bipolar transistors; high electron mobility transistors; microwave bipolar transistors; microwave field effect transistors; millimetre wave bipolar transistors; millimetre wave field effect transistors; mixed analogue-digital integrated circuits; narrow band gap semiconductors; technological forecasting; wide band gap semiconductors; HEMT; MESFET; MM-wave frequencies; analog circuits; compound semiconductor electronics; future opportunities; high performance transistors; microwave frequencies; mixed signal circuits; molecular electronics; molecular switching; narrow bandgap devices; recent developments; superscaled heterojunction bipolar transistors; wide bandgap devices; Circuits; Consumer electronics; Gallium arsenide; Low voltage; Noise figure; Photonic band gap; Semiconductor materials; Silicon; Space technology; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE

Conference_Location

San Diego, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-7833-4

Type

conf

DOI

10.1109/GAAS.2003.1252350

Filename

1252350