Title :
25 years of digital III-V technology: a perspective
Author_Institution :
Technol. Applications, Briarcliff, TX, USA
Abstract :
The intent of this paper is to provide a historical perspective, and understanding in an economic-business context, of how various characteristics of the III-V technologies, as well as those of the competitive silicon IC technologies, acted to define the roles that III-V ICs would assume in the electronics industry, and to shape the focus of III-V technology development.
Keywords :
III-V semiconductors; MESFET integrated circuits; field effect digital integrated circuits; gallium arsenide; history; GaAs; MESFET IC; digital III-V technology; economic-business context; historical perspective; hysteresis effects; technology development; Application specific integrated circuits; Business; Digital integrated circuits; Electronics industry; Gallium arsenide; III-V semiconductor materials; Logic; MESFET integrated circuits; Semiconductor device manufacture; Silicon;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252351
