Author :
Tateshita, Y. ; Wang, J. ; Nagano, K. ; Hirano, T. ; Miyanami, Y. ; Ikuta, T. ; Kataoka, T. ; Kikuchi, Y. ; Yamaguchi, S. ; Ando, T. ; Tai, K. ; Matsumoto, R. ; Fujita, S. ; Yamane, C. ; Yamamoto, R. ; Kanda, S. ; Kugimiya, K. ; Kimura, T. ; Ohchi, T. ; Y
Abstract :
CMOS technologies using metal/high-k damascene gate stacks with uniaxial strained silicon channels were developed. Gate electrodes of HfSix and TiN were applied to nFETs and pFETs, respectively. TiN/HfO2 damascene gate stacks and epitaxial SiGe source/drains were successfully integrated for the first time. As a result, drive currents of 1050 and 710 muA/mum at Vdd=l V, Ioff=100 nA/um and Tinv=1.6 nm were obtained for the nFETs and pFETs. The further integration of pFETs on (110) substrates contributed to a higher drive current of 830 muA/mum. These performances were realized under low gate leakage currents of 0.03 A/cm2 and below
Keywords :
CMOS integrated circuits; hafnium compounds; low-power electronics; titanium compounds; 1 V; CMOS device; HfSi; TiN-HfO2; damascene gate stacks; high performance; low power; metal/high-k gate stacks; nFET; pFET; uniaxial strained silicon channels; CMOS technology; Electrodes; Germanium silicon alloys; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; Silicon germanium; Substrates; Tin;
