Title :
Progress in GaAs metamorphic HEMT technology for microwave applications
Author :
Smith, P.M. ; Dugas, D. ; Chu, K. ; Nichols, K. ; Duh, K.G. ; Fisher, J. ; Mt Pleasant, L. ; Xu, D. ; Gunter, L. ; Vera, A. ; Lender, R. ; Meharry, D.
Author_Institution :
BAE Syst., Nashua, NH, USA
Abstract :
This paper reviews recent progress in the development of GaAs metamorphic HEMT (MHEMT) technology for microwave applications. Commercialization has begun, while efforts to further improve performance, manufacturability and reliability continue. We also report the first multi-watt MHEMT MMIC power amplifiers, demonstrating up to 3.2W output power and record power-added efficiency (PAE) at Ka-band.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium arsenide; integrated circuit reliability; reviews; 3.2 W; GaAs; Ka-band; MMIC power amplifiers; commercialization; low noise amplifiers; manufacturability; metamorphic HEMT technology; microwave applications; performance; power-added efficiency; reliability; Frequency; Gallium arsenide; HEMTs; Indium phosphide; MMICs; MODFETs; Manufacturing; Microwave technology; Power amplifiers; mHEMTs;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252354
