Title :
High-Performance PMOS Devices on (110)/<111´> Substrate/Channel with Multiple Stressors
Author :
Wang, Howard C H ; Huang, Shih-Hian ; Tsai, Ching-Wei ; Lin, Hsien-Hsin ; Lee, Tze-Liang ; Chen, Shih-Chang ; Diaz, Carlos H. ; Liang, Mong-Song ; Sun, Jack Y C
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsinchu
Abstract :
A study was performed to investigate the effect of multiple stressors on CMOS devices on (110) and (100) substrates with different channel directions. For the first time, 87% ION-IOFF improvement is achieved by utilizing SiGe-S/D and compressive contact etch stop layer (c-CESL) for PMOS devices on (110) substrate with lang111´rang channel direction. The improvement is similar to that on conventional (100) substrate with lang110>rangchannel direction and can be explained by piezoresistive coefficients. Record PMOS device performance of Ion = 900 muA/mum at Ioff = 100 nA/mum and VDD = 1.0V for 40nm gate length is demonstrated
Keywords :
Ge-Si alloys; MOSFET; 1 V; 40 nm; CMOS devices; PMOS devices; SiGe; channel directions; compressive contact etch stop layer; multiple stressors; piezoresistive coefficients; Capacitive sensors; Degradation; Dielectric substrates; Etching; Germanium silicon alloys; MOS devices; Niobium compounds; Piezoresistance; Silicon germanium; Titanium compounds;
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Electronic_ISBN :
1-4244-0439-8
DOI :
10.1109/IEDM.2006.346960
