Title :
High speed CMOS circuits up to 40 Gb/s and 50 GHz
Author :
Wohlmuth, H.-D. ; Kehrer, D. ; Tiebout, M. ; Knapp, H. ; Wurzer, M. ; Simburger, W.
Author_Institution :
Corporate Res., Infineon Technol. AG, Munich, Germany
Abstract :
CMOS has demonstrated to be a suitable technology for wireless communications and very high bit-rate broadband circuits over 10 Gb/s. This paper presents advances in circuit design which fully exploit the high-speed potential of a 0.13 /spl mu/m standard CMOS technology up to 40 Gb/s and 50 GHz. The combination of advanced circuit techniques and state of the art fabrication process technology results in continuing the upward shift of frequency limits.
Keywords :
CMOS integrated circuits; MMIC oscillators; demultiplexing equipment; field effect MIMIC; field effect MMIC; frequency dividers; high-speed integrated circuits; millimetre wave oscillators; multiplexing equipment; voltage-controlled oscillators; 40 Gbit/s; 50 GHz; VCO; advanced circuit techniques; circuit design; demultiplexers; fabrication process technology; frequency divider; high bit rate broadband circuit; high speed CMOS circuits; low power consumption; multiplexer; CMOS technology; Costs; Energy consumption; Fabrication; Frequency conversion; Integrated circuit technology; Master-slave; Multiplexing; Optical frequency conversion; Radio frequency;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252356
