Comprehensive Study on Injection Velocity Enhancement in Dopant-Segregated Schottky MOSFETs

Author

Kinoshita, A. ; Kinoshita, T. ; Nishi, Y. ; Uchida, K. ; Toriyama, S. ; Hasumi, R. ; Koga, J.

Author_Institution

Adv. LSI Technol. Lab., Toshiba Corp., Yokohama

fYear

2006

fDate

11-13 Dec. 2006

Firstpage

1

Lastpage

4

Abstract

The carrier transport in dopant-segregated Schottky (DSS) and conventional MOSFETs was thoroughly investigated in terms of carrier injection velocity, v_inj. It was found that v_inj enhancement associated with the velocity overshoot enhances the current drivability in DSS, in addition to the reduction of parasitic resistance. A physical-based model was newly developed to explain the velocity overshoot behavior and reproduced the experimental data very well. Moreover, a novel type of DSS FinFET to take full advantage of the velocity overshoot was proposed and demonstrated as a primary study

Keywords

MOSFET; Schottky gate field effect transistors; semiconductor device models; DSS FinFET; carrier injection velocity; carrier transport; dopant-segregated Schottky MOSFET; injection velocity enhancement; parasitic resistance; velocity overshoot; Capacitive sensors; Charge carrier density; Decision support systems; FinFETs; Hot carrier injection; Laboratories; Large scale integration; MOSFETs; Research and development; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2006. IEDM '06. International

Conference_Location

San Francisco, CA

Print_ISBN

1-4244-0439-8

Electronic_ISBN

1-4244-0439-8

Type

conf

DOI

10.1109/IEDM.2006.346963

Filename

4154398