DocumentCode :
2390831
Title :
CMOS and Interconnect Reliability - Interconnect, ESD, and Failure Analysis
fYear :
2006
fDate :
11-13 Dec. 2006
Firstpage :
1
Lastpage :
1
Keywords :
Active circuits; Conductivity; Design optimization; Electromigration; Electrostatic discharge; Failure analysis; FinFETs; Integrated circuit interconnections; Kinetic theory; Semiconductor device reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0438-X
Type :
conf
DOI :
10.1109/IEDM.2006.346964
Filename :
4154399
Link To Document :
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