On the determination of poisson’s ratio of stressed monolayer and bilayer submicron thick films

Author

Martins, P. ; Malhaire, C. ; Brida, S. ; Barbier, D.

Author_Institution

CNRS UMR, Villeurbanne

fYear

2008

fDate

9-11 April 2008

Firstpage

197

Lastpage

200

Abstract

In this paper, the bulge test is used to determine the mechanical properties of very thin dielectric membranes. Commonly, this experimental method permits to determine the residual stress (sigma₀) and biaxial Youngpsilas modulus (E/(1- upsi)). Associating square and rectangular membranes with different length to width ratios, the Poissonpsilas ratio (upsi) can also be determined. LPCVD Si₃N₄ monolayer and Si₃N₄/SiO₂ bilayer membranes, with thicknesses down to 104 nm, have been characterized giving results in agreement with literature for Si₃N₄, E = 212 plusmn 114 GPa, sigma₀ = 420 plusmn 8 and upsi = 0.29.

Keywords

Poisson ratio; Young´s modulus; chemical vapour deposition; dielectric materials; internal stresses; monolayers; thick films; LPCVD; Poissonpsilas ratio; Si₃N₄-SiO₂; biaxial Youngpsilas modulus; bilayer submicron thick films; bulge test; mechanical properties; rectangular membranes; residual stress; square membranes; stressed monolayer; very thin dielectric membranes; Biomembranes; Dielectrics; Mechanical factors; Mechanical systems; Micromechanical devices; Residual stresses; Shape; Testing; Thick films; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Design, Test, Integration and Packaging of MEMS/MOEMS, 2008. MEMS/MOEMS 2008. Symposium on

Conference_Location

Nice

Print_ISBN

978-2-35500-006-5

Type

conf

DOI

10.1109/DTIP.2008.4752983

Filename

4752983