DocumentCode :
2390874
Title :
A Variable Current Exponent Model for Electromigration Lifetime Relaxation in Short Cu Interconnects
Author :
Park, Young-Joon ; Lee, Ki-Don ; Hunter, William R.
Author_Institution :
Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX
fYear :
2006
fDate :
11-13 Dec. 2006
Firstpage :
1
Lastpage :
4
Abstract :
The short length effect on the electromigration (EM) lifetime is a valuable resource to increase current limits in advanced circuits. We model the effect with variable (current density j sensitive) current exponent n for short leads and calculate how much lifetime margin should be observed for a certain EM rule relaxation. The shorter leads have larger (variable) n so that the EM lifetime decreases faster as the current density increases. We utilize an empirical relationship for the dependence of n on j, which includes a parameter nBS for short leads. We find that to achieve a 2times EM rule relaxation, we must confirm > 25times EM lifetime for nBS = 3 and > 125times for nBS = 5. We illustrate an empirical approach for determining nBS
Keywords :
copper; electromigration; integrated circuit interconnections; integrated circuit modelling; Cu; EM rule relaxation; current density; electromigration lifetime relaxation; lifetime margin; short Cu interconnects; variable current exponent model; Current density; Differential equations; Electromigration; Electronic mail; Instruments; Integrated circuit interconnections; Silicon; Stress; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2006. IEDM '06. International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0439-8
Electronic_ISBN :
1-4244-0439-8
Type :
conf
DOI :
10.1109/IEDM.2006.346966
Filename :
4154401
Link To Document :
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