• DocumentCode
    2390874
  • Title

    A Variable Current Exponent Model for Electromigration Lifetime Relaxation in Short Cu Interconnects

  • Author

    Park, Young-Joon ; Lee, Ki-Don ; Hunter, William R.

  • Author_Institution
    Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The short length effect on the electromigration (EM) lifetime is a valuable resource to increase current limits in advanced circuits. We model the effect with variable (current density j sensitive) current exponent n for short leads and calculate how much lifetime margin should be observed for a certain EM rule relaxation. The shorter leads have larger (variable) n so that the EM lifetime decreases faster as the current density increases. We utilize an empirical relationship for the dependence of n on j, which includes a parameter nBS for short leads. We find that to achieve a 2times EM rule relaxation, we must confirm > 25times EM lifetime for nBS = 3 and > 125times for nBS = 5. We illustrate an empirical approach for determining nBS
  • Keywords
    copper; electromigration; integrated circuit interconnections; integrated circuit modelling; Cu; EM rule relaxation; current density; electromigration lifetime relaxation; lifetime margin; short Cu interconnects; variable current exponent model; Current density; Differential equations; Electromigration; Electronic mail; Instruments; Integrated circuit interconnections; Silicon; Stress; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0439-8
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346966
  • Filename
    4154401