2-GHz Band Cryogenically-Cooled GaN HEMT Amplifier for Mobile Base Station Receivers

Author

Narahashi, Shoichi ; Suzuki, Yasunori ; Nojima, Toshio

Author_Institution

NTT DoCoMo, Inc., Yokosuka

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

399

Lastpage

402

Abstract

This paper presents a 2-GHz band gallium nitride (GaN) high electron mobility transistor (HEMT) amplifier cryogenically cooled to 60 K as a part of the cryogenic receiver front-end (CRFE) for mobile base station receivers. The GaN HEMT amplifier attains the output power of 3 W and the maximum power added efficiency of 62% with a 50 V drain bias for class-AB operation. The results reported herein are the first on the performance of a cryogenically cooled GaN HEMT amplifier aiming at use in a 2-GHz band CRFE.

Keywords

UHF power amplifiers; cryogenic electronics; gallium compounds; high electron mobility transistors; microwave power amplifiers; microwave receivers; radio receivers; 2-GHz band cryogenically-cooled GaN; GaN; HEMT amplifier; class-AB operation; cryogenic receiver front-end; high electron mobility transistor; mobile base station receiver; Base stations; Cryogenics; FETs; Frequency; Gallium arsenide; Gallium nitride; HEMTs; Linearity; Power generation; Receiving antennas; Cryogenic electronics; HEMT; microwave power amplifiers; microwave receivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Technologies, 2007 European Conference on

Conference_Location

Munich

Print_ISBN

978-2-87487-003-3

Type

conf

DOI

10.1109/ECWT.2007.4404031

Filename

4404031