Title :
Reliability of commercial InGaP/GaAs HBTs under high voltage operation
Author :
Kevin Feng ; Yuefei Yang ; Chanh Nguyen
Author_Institution :
Global Commun. Semicond. Inc., Torrance, CA, USA
Abstract :
GSC has developed a high-performance, high-reliability, and manufacturable high breakdown voltage (HBV) InGaP/GaAs HBT process for power amplifiers of up to 10 V operation. Two major failure modes: sudden beta degradation and gradual beta drift, at normal operating conditions under high voltage bias were found. The associated activation energy is extracted about 1.1 eV and the projected MTTF to be 7/spl times/10/sup 6/ hours at 125/spl deg/C, which is sufficient to meet the stringent reliability requirement for infrastructure applications.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; power amplifiers; power bipolar transistors; semiconductor device breakdown; semiconductor device reliability; 1.1 eV; 10 V; 125 degC; HBT failure modes; HBT high voltage operation; InGaP-GaAs; activation energy; beta degradation; beta drift; commercial HBT reliability; high breakdown voltage HBT; high voltage bias; power amplifiers; projected MTTF; reliability requirements; Current density; Degradation; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Life testing; Metallization; Stress; Temperature; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252364
