• DocumentCode
    2390992
  • Title

    Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies

  • Author

    Salman, Akram A. ; Beebe, Stephen G. ; Emam, Mostafa ; Pelella, Mario M. ; Ioannou, Dimitris E.

  • Author_Institution
    Adv. Micro Devices, Sunnyvale, CA
  • fYear
    2006
  • fDate
    11-13 Dec. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper the authors present the field effect diode (FED) as a novel device with a new approach for ESD protection in SOI. Device parameters are identified and optimized to achieve optimum ON and OFF behavior. Furthermore, the authors present two ways the FED can be used in an ESD protection scheme: in I/O clamping and in a high-voltage supply clamp
  • Keywords
    diodes; electrostatic discharge; field effect devices; silicon-on-insulator; ESD protection; electrostatic discharge; field effect diode; high-voltage supply clamp; silicon-on-insulator; Anodes; Capacitance; Clamps; Doping; Drives; Electrostatic discharge; Protection; Semiconductor diodes; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2006. IEDM '06. International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-4244-0438-X
  • Electronic_ISBN
    1-4244-0439-8
  • Type

    conf

  • DOI
    10.1109/IEDM.2006.346971
  • Filename
    4154406
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2390992