Title :
Study of self-point defects in highly-pure silicon
Author :
Martin, J. ; Bettin, H. ; Kuetgens, U. ; Stumpel, J. ; Becker, P. ; Zulehner, W.
Author_Institution :
Physikalisch Tech. Bundesanstalt, Braunschweig, Germany
Abstract :
Almost pure silicon crystals are essential for the production of the next generation of highly integrated electronic devices containing significantly less amount of self-point defects than commonly available material. For metrological applications this new material can open the door for a new definition of the unit of mass by a representation of a certain number of Si atoms.
Keywords :
elemental semiconductors; measurement errors; point defects; silicon; units (measurement); Si; integrated electronic devices; mass unit; metrological applications; self-point defects; Atomic measurements; Crystalline materials; Crystals; Lattices; Measurement uncertainty; Nitrogen; Positrons; Production; Semiconductor impurities; Silicon;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location :
Braunschweig, Germany
Print_ISBN :
0-7803-3376-4
DOI :
10.1109/CPEM.1996.546753
