DocumentCode
2391060
Title
Study of self-point defects in highly-pure silicon
Author
Martin, J. ; Bettin, H. ; Kuetgens, U. ; Stumpel, J. ; Becker, P. ; Zulehner, W.
Author_Institution
Physikalisch Tech. Bundesanstalt, Braunschweig, Germany
fYear
1996
fDate
17-21 June 1996
Firstpage
165
Lastpage
166
Abstract
Almost pure silicon crystals are essential for the production of the next generation of highly integrated electronic devices containing significantly less amount of self-point defects than commonly available material. For metrological applications this new material can open the door for a new definition of the unit of mass by a representation of a certain number of Si atoms.
Keywords
elemental semiconductors; measurement errors; point defects; silicon; units (measurement); Si; integrated electronic devices; mass unit; metrological applications; self-point defects; Atomic measurements; Crystalline materials; Crystals; Lattices; Measurement uncertainty; Nitrogen; Positrons; Production; Semiconductor impurities; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location
Braunschweig, Germany
Print_ISBN
0-7803-3376-4
Type
conf
DOI
10.1109/CPEM.1996.546753
Filename
546753
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