Title :
Development of 60 GHz front end circuits for high data rate communication systems in Sweden and Europe
Author_Institution :
Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
Recent results from a Swedish program for development of 60 GHz MMICs for high data rate communication links are presented as well as results from similar programs in Europe. A GaAs PHEMT technology has been used for the realization of front-end circuits such as mixers, amplifiers, frequency multipliers, IF-amplifiers with gain-control, and VCOs. The GaAs PHEMT technology proved to give excellent circuit results, with the exception of the VCOs. Different GaAs PHEMT based VCO-topologies such as common gate push-push Colpitt and balanced negative gm, optimized for low phase noise have therefore been studied extensively. The latest results proves that it is possible to design VCOs comparable with the best published HBT-based oscillators. The metamorphic HEMT technology can offer additional advantages such as lower power consumption and InP-HEMT performance at the cost of GaAs. Recent results on 60 GHz amplifiers and mixers based on this technology are presented.
Keywords :
field effect MIMIC; frequency multipliers; high electron mobility transistors; millimetre wave amplifiers; millimetre wave mixers; millimetre wave oscillators; phase noise; voltage-controlled oscillators; 60 GHz; GaAs; MMIC; PHEMT technology; amplifiers; balanced negative gm VCO; common gate push-push Colpitt VCO; frequency multipliers; front end circuits; gain-controlled IF-amplifiers; high data rate communication links; low phase noise; metamorphic HEMT technology; mixers; Circuits; Energy consumption; Europe; Frequency; Gallium arsenide; MMICs; Oscillators; PHEMTs; Phase noise; mHEMTs;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7833-4
DOI :
10.1109/GAAS.2003.1252371
